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May 2005
FDD5614P
60V P-Channel PowerTrench ? MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
? DC/DC converter
? Power management
? Load switch
Features
? –15 A, –60 V. R DS(ON) = 100 m ? @ V GS = –10 V
R DS(ON) = 130 m ? @ V GS = –4.5 V
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
S
D
G
S
TO-252
G
D
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 3)
– 15
A
– Pulsed
(Note 1a)
– 45
P D
Power Dissipation for Single Operation
(Note 1)
42
W
(Note 1a)
(Note 1b)
3.8
1.6
T J , T STG
Operating and Storage Junction Temperature Range
– 55 to +175
° C
Thermal Characteristics
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
3.5
40
96
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD5614P
Device
FDD5614P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2005 Fairchild Semiconductor Corporation
FDD5614P Rev C1(W)
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